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PD- 95255
SMPS MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
IRF3000PBF
HEXFET(R) Power MOSFET RDS(on) max
0.40W@VGS = 10V
VDSS
300V
ID
1.6A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
1.6 1.3 13 2.5 0.02 30 8.9 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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IRF3000PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 300 --- --- 3.0 --- --- --- --- Typ. --- 0.38 0.34 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.40 VGS = 10V, ID = 0.96A 5.0 V VDS = VGS, ID = 250A 25 VDS = 300V, VGS = 0V A 250 VDS = 240V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.0 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 22 4.7 11 8.2 7.2 23 23 730 100 20 940 39 87 Max. Units Conditions --- S VDS = 50V, ID = 0.96A 33 ID = 0.96A 7.1 nC VDS = 240V 17 VGS = 10V, --- VDD = 150V --- ID = 0.96A ns --- RG = 2.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 240V, = 1.0MHz --- VGS = 0V, VDS = 0V to 240V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
47 1.9
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 86 250 1.6 A 13 1.5 130 380 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 0.96A, VGS = 0V TJ = 25C, IF = 0.96A di/dt = 100A/s
D
S
2
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IRF3000PBF
100
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
1
5.5V
1
5.5V
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
2.5
I D = 1.6A
ID, Drain-to-Source Current ( A)
2.0
10.0
T J = 150C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
1.0
T J = 25C
1.0
0.5
0.1 5.0 6.0
VDS = 50V 20s PULSE WIDTH
7.0 8.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ, Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF3000PBF
100000 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd
20
VGS , Gate-to-Source Voltage (V)
C ds
ID= 0.96A 16 VDS= 240V VDS= 150V VDS= 60V
10000
C, Capacitance (pF)
1000
12
Ciss
100
8
Coss Crss
10
4
FOR TEST CIRCUIT SEE FIGURE 14
0
1 1 10 100 1000
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10.0 TJ = 150C
10
100sec 1 1msec 10msec 100 1000 10000
1.0
T J = 25C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 1.8
0.1
Tc = 25C Tj = 150C Single Pulse 1 10
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF3000PBF
2.0
VDS
1.6
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
-V DD
1.2
10V
0.8
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
0.4
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
(Z thJA )
10
0.20 0.10 0.05
Thermal Response
1
0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T A 10 100
0.1
J = P DM x Z thJA
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF3000PBF
RDS (on) , Drain-to-Source On Resistance ( )
0.50
RDS(on) , Drain-to -Source On Resistance ( )
0.80
0.70
0.46
0.60
0.42 VGS = 10V 0.38
0.50
ID = 0.96A
0.40
0.34 0 2 4 6 8 10 12 14 ID , Drain Current (A)
0.30 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
100
VG
ID TOP
Charge
VGS
3mA
80
Current Sampling Resistors
EAS , Single Pulse Avalanche Energy (mJ)
IG
ID
BOTTOM
0.9A 1.5A 1.9A
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
60
40
15V
V(BR)DSS tp
VDS L
20
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0 25 50 75 100 125 150
A
I AS
tp
0.01
Starting T , Junction Temperature J
( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF3000PBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1
A C 0.10 [.004] y
K x 45
8X b 0.25 [.010]
A1 CAB
8X L 7
8X c
NOT ES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR SOLDERING T O A S UBST RATE. 3X 1.27 [.050] 6.46 [.255]
FOOTPRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
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IRF3000PBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 26mH
R G = 25, IAS = 1.9A.
Pulse width 300s; duty cycle 2%.
ISD 0.96A, di/dt 170A/s, VDD V(BR)DSS,
T J 150C
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
8
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